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NOR
NOR
NOR Flash Memory, each of the two units share a bit line contact hole and a source line, using CHE and F write source - N erase, with high programming speed and high reading speed advantages, and has the following characteristics: (1) the program and data can be stored on the same chip. And the address and data buses with independent, fast random access, allowing the system to read directly from the Flash code to execute without first will execute code downloaded to RAM; (2) can be single byte or word programming, but not single byte erase. Must be single or the entire perform erase to block, before re programming the memory need to be pre program and erase operations on the block or the whole piece. Suitable for storage code, such as used to do BOIS.
  • P/N FM25M32B
    Density

    32Mb

    PKG(mm)

    KGD, USON, SOP, WSON, TFBGA

    Voltage

    1.8V

    Temp.Range

    -40℃~85℃

    Configurations X1, X2 & X4
    Status MP
    分红方式
    剩余 0
    发布时间: 2016 - 09 - 20
    Density: 32MbFeature: Single, Dual, Quad, QPI(1.8V Support)P/N: FM25M32BVoltage: 1.8VTemp: 0℃~70℃,-25℃~85℃,-40℃~85℃Data Speed: 104MHz, 208MHz equivalent Dual SPI, 416MHz equivalent Quad SPIPKG(mm):KGD8 Pin USON 4x4 0.55T8 Pin 208 Mil SOP8 Pin WSON 6x5/8x624ball TFBGA9 Pin WSON 6x5Function:Uniform Sector Erase (4K-byte)Status: MP
    Operating See details
  • P/N FM25M64C
    Density

    64Mb

    PKG(mm)

    KGD, USON, SOP, WSON, TFBGA

    Voltage

    1.8V

    Temp.Range

    -40℃~85℃